Part Number Hot Search : 
MP100 TL1431 IC149 NTE243 2SK1305 UDN2993B RGL41K S08AW16
Product Description
Full Text Search
 

To Download B15V140 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 BIPOLARICS, INC.
Part Number B15V140
MEDIUM POWER SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
FEATURES:
DESCRIPTION AND APPLICATIONS:
Bipolarics' B15V140 is a high performance silicon bipolar transistor intended for medium power linear and Class C applications at VHF, UHF and microwave frequencies in 7.2 and 12V systems. Depending on package type, the B15V140 can operate at up to 0.5W. These applications include high intermod receivers, CATV and instrumentation amplifiers as well as pre-drivers, drivers and final stages in transmitter applications such as cellular telephone. Package options include Dice, SOT-223 Surface Mount, Ceramic Micro-X, 0.145" Plastic SOT-103 and 0.230" power flange package.
*
High Gain Bandwidth Product f = 8 GHz typ @ I C = 70 mA t |S21| 2 = 15.6 dB @ 1.0 GHz 9.0 dB @ 2.0 GHz
* High Gain
Absolute Maximum Ratings:
*
Dice, Plastic, Hermetic and Surface Mount packages available
SYMBOL
PARAMETERS
RATING
UNITS
PERFORMANCE DATA:
*
Electrical Characteristics (TA = 25oC)
PARAMETERS & CONDITIONS
VCBO VCEO VEBO IC IC MAX T J (1) TSTG
Collector-Base Voltage 30 Collector-Emitter Voltage 15 Emitter-Base Voltage 1.5 Collector Current (continuous) 120 Collector Current (instantaneous) 180 Junction Temperature 200 Storage Temperature -65 to 150
V V V mA mA o C o C
(1) Depends on package
SYMBOL
UNIT
MIN.
TYP.
MAX.
VCE = 10V, I C =70 mA, Class A, unless stated
f
t
Gain Bandwidth Product Insertion Power Gain: f = 1.0 GHz f = 2.0 GHz f = 1.0 GHz IC = 75 mA f = 1.0 GHz
GHz dB dB dBm
8.0 15.6 9.0 27.0
|S 21 | 2
P1d B NF hFE ICBO
Power output at 1dB compression:
Noise Figure: VCE =8V, I C =20 mA
dB
1.6
Forward Current Transfer Ratio: VCE = 8V, IC =15 mA Collector Cutoff Current : VCB =10V A
30
100
300
0.4
C CB
Collector Base Capacitance: VCB =10V
f = 1MHz
pF
.75
PAGE 2
BIPOLARICS, INC.
TYPICAL S PARAMETERS:
VCE = 3.3 V, IC = 75 mA FREQ. S21 GHz dB Mag 0.20 24.00 15.84 0.50 18.20 8.12 1.00 12.00 3.98 1.50 8.80 2.75 2.00 6.20 2.04 2.50 4.30 1.64 3.00 2.70 1.36 3.50 1.70 1.21 4.00 0.00 1.00 VCE = 6 V, FREQ. GHz 0.20 0.40 0.60 0.80 1.00 1.20 1.50 2.00 2.50 3.50 4.00 VCE = 8 V, FREQ. GHz 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.20 2.40 2.60 2.80 3.00 3.20 3.40 3.60 3.80 4.00 4.20 IC = 80 mA S21 dB Mag 24.75 17.27 21.40 11.74 17.40 7.41 15.30 5.82 13.40 4.67 11.90 3.93 9.80 3.09 7.30 2.31 5.40 1.86 2.7 1.36 0.9 1.10 IC = 35 mA S21 dB Mag 24.5 16.78 21.8 12.30 18.3 8.222 16.2 6.456 14.1 5.069 12.8 4.365 11.4 3.715 10.4 3.311 10.0 3.162 8.4 2.630 7.5 2.371 6.6 2.137 6.1 2.018 5.2 1.819 4.9 1.757 3.9 1.566 3.4 1.479 3.1 1.428 2.1 1.273 2.0 1.258 1.0 1.122 ZO = 50.0 Ang 109 90 78 68 58 48 44 34 29 ZO = 50.0 Ang 110 94 85 81 77 72 66 57 48 34 26 ZO = 50.0 Ang 126 104 92 86 83 76 70 68 65 61 55 55 50 47 45 40 41 33 33 35 26
Part Number B15V140
TA =25O (Note: S-parameters were taken in a 35 package.) S12 S11 S22 Mag Ang Mag Ang Mag 0.0233 54 0.5370 -162 0.1927 0.0380 64 0.6683 178 0.1412 0.0691 72 0.7161 176 0.1513 0.1011 74 0.6760 159 0.1840 0.1364 74 0.6606 152 0.2371 0.1621 74 0.7413 145 0.2985 0.1883 73 0.7585 142 0.3388 0.2213 70 0.8035 133 0.3981 0.2454 69 0.7498 131 0.5128
MEDIUM POWER SILICON MICROWAVE TRANSISTOR
Ang -103 -141 -141 -141 -145 -153 -146 -151 -153
TA =25O (Note: S-parameters were taken in a 35 package.) S12 S11 S22 Mag Ang Mag Ang Mag 0.0177 49 0.5688 -161 0.1995 0.0301 62 0.7079 -179 0.1318 0.0346 67 0.6839 173 0.1161 0.0457 72 0.6683 174 0.1288 0.0543 76 0.6839 174 0.1035 0.0660 76 0.6606 162 0.1230 0.0822 76 0.6531 153 0.1230 0.1148 78 0.6760 149 0.1584 0.1412 80 0.7328 133 0.2851 0.1949 78 0.8317 120 0.3507 0.2238 76 0.8222 120 0.4786 TA =25O (Note: S-parameters were taken in a 35 package.) S12 S11 S22 Mag Ang Mag Ang Mag 0.0239 42 0.5821 -146 0.3801 0.0263 48 0.7585 -168 0.2884 0.0354 52 0.7244 -179 0.2600 0.0426 56 0.7413 179 0.2600 0.0467 64 0.7943 176 0.2371 0.0543 65 0.7585 166 0.2630 0.0602 67 0.7161 159 0.2630 0.0691 68 0.7585 156 0.2691 0.0724 70 0.7585 154 0.2884 0.0794 71 0.7585 150 0.2851 0.0841 71 0.7852 141 0.3235 0.0870 74 0.7673 138 0.3054 0.0954 73 0.8222 134 0.3630 0.1000 73 0.8222 132 0.3589 0.1109 76 0.8511 130 0.3935 0.1148 73 0.8317 126 0.4315 0.1216 75 0.8413 126 0.3845 0.1318 75 0.9120 118 0.4677 0.1303 74 0.8128 115 0.4216 0.1462 76 0.8709 119 0.4415 0.1479 72 0.8609 112 0.4518
Ang -72 -98 -102 -106 -100 -104 -114 -116 -134 -140 -142
Ang - 86 -122 -134 -145 -147 -152 -154 -158 -163 -165 -177 -176 180 175 180 172 171 165 159 170 156
PAGE 3
BIPOLARICS, INC.
TYPICAL S PARAMETERS:
VCE = 8 V, IC = 75 mA FREQ. S21 GHz dB Mag 0.20 25.0 17.78 0.40 21.6 12.02 0.60 18.4 8.317 0.80 16.2 6.456 1.00 14.2 5.128 1.20 12.8 4.365 1.40 11.4 3.715 1.60 10.1 3.198 1.80 9.1 2.851 2.00 8.2 2.570 2.20 6.9 2.213 2.40 6.0 1.995 2.60 5.5 1.883 2.80 4.6 1.698 3.00 4.3 1.640 3.20 3.6 1.513 3.40 3.0 1.412 3.60 2.7 1.364 3.80 1.5 1.188 4.00 1.8 1.230 4.20 0.6 1.071 VCE = 8 V, IC = 75 mA FREQ. GHz 0.20 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 dB 25.60 20.0 15.60 12.20 9.0 8.0 6.80 4.40 1.60 S21 Mag 19.05 10.0 6.02 4.07 2.82 2.51 2.23 1.66 1.20 ZO = 50.0 Ang 124 102 92 87 83 78 72 70 66 63 58 59 54 51 49 45 46 37 17 18 30
Part Number B15V140
TA =25OC (Note: S-parameters were taken in a 35 package.) S12 S11 S22 Mag Ang Mag Ang Mag 0.0169 46 0.6456 -156 0.3090 0.0229 54 0.8128 -136 0.2630 0.0288 62 0.7843 176 0.2511 0.0371 68 0.7952 174 0.2600 0.0426 72 0.7943 172 0.2371 0.0506 73 0.7943 162 0.2630 0.0575 73 0.7478 156 0.2630 0.0630 74 0.7943 154 0.2722 0.0707 77 0.7762 151 0.2884 0.0794 77 0.7673 148 0.2851 0.0860 75 0.7852 139 0.3235 0.0891 78 0.7762 136 0.3090 0.1000 77 0.8222 132 0.3845 0.1047 77 0.8222 131 0.4265 0.1109 79 0.8413 129 0.4073 0.1174 76 0.8317 128 0.4073 0.1244 78 0.8413 125 0.3801 0.1348 75 0.9120 117 0.4677 0.1303 76 0.8128 114 0.4168 0.1462 79 0.8709 118 0.4365 0.1479 74 0.8609 111 0.4415 TA =25OC (Note: S-parameters were taken in a 23 package.) S12 S11 Ang -12 20 58 68 30 -38 -36 -30 -64 Mag 0.5128 0.4731 0.5011 0.4518 0.4027 02238 0.6309 0.6025 0.3548 Ang -147 174 168 121 87 21 -1 -23 -65 Mag 0.3090 0.3162 0.5623 0.3198 0.6095 0.5128 0.6683 0.7413 0.7585 S22 Ang -102 -109 -149 4 163 160 94 44 48 Mag 0.0151 0.0208 0.0446 0.0676 0.0776 0.0562 0.1258 0.0891 0.0794
MEDIUM POWER SILICON MICROWAVE TRANSISTOR
Ang -102 -136 -145 -155 -155 -159 -169 -164 -168 -168 178 180 176 172 177 169 168 162 156 167 -154
ZO = 50.0 Ang 106 85 66 46 20 14 -54 -79 -90 ZO = 50.0 Ang 100 80 60 50 35 35 9 -2 -14
VCE = 8 V, IC = 80 mA FREQ. GHz 0.20 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 dB 26.80 19.80 14.00 11.00 8.70 6.20 5.80 5.00 4.60 S21 Mag 21.87 9.77 5.01 3.54 2.72 2.04 1.95 1.77 1.69
TA =25OC (Note: S-parameters were taken in a -18 package.) S12 Mag 0.0199 0.0431 0.0841 0.1258 0.1778 0.2344 0.3019 0.3630 0.4731 Ang 66 70 71 72 65 62 56 48 35 Mag 0.4216 0.5688 0.5011 0.4168 0.3162 0.2511 0.2113 0.2018 0.2290 S11 Ang -160 175 157 146 120 94 56 0 -60 Mag 0.2691 0.1972 0.3162 0.5308 0.6760 0.7673 0.6165 0.6918 0.5888 S22 Ang -78 -98 -106 -111 -128 -139 -155 -158 -160
PAGE 4
BIPOLARICS, INC.
85 Package: Micro-X 85 Mil Ceramic
Part Number B15V140
70 Package: 70 Mil Stripline
MEDIUM POWER SILICON MICROWAVE TRANSISTOR
5.0 MIN (ALL LEADS)
45
0.5+0.07
1.0+0.1 +0.06 0.1 -0.03 2.5 +0.4 -0.2 1.3 +0.4 -0.3
23 Package: 0.230" BeO Flange
LEAD
10 Package 14, 85, 86, 35 & 04 Package
1
Emitter
2
Base
3
Emitter
4
Collector Emitter
Base Emitter Collector
NOTES: (unless otherwise specified)
in 1. Dimensions are ( mm ) 2. Tolerances: in .xxx = .005 mm .xx = .13 3. All dimensions nominal; subject to change without notice
PAGE 5
BIPOLARICS, INC.
22 Package: SOT-223
Part Number B15V140
43 Package: SOT-143
MEDIUM POWER SILICON MICROWAVE TRANSISTOR
02 Package: SOT-23
0.30 0.51
02 Package: SOT-23J
1.39 1.57 0.45 0.60 1.90
2.25 2.75 0.95
2.65 3.04 0.79 1.1
0.00 0.10
0.10 0.45 0.60
PAGE 6
BIPOLARICS, INC.
86 Package: 0.08" Plastic Micro-X, Surface Mount
Part Number B15V140
MIDIUM POWER SILICON MICROWAVE TRANSISTOR
87 Package: 0.085" Plastic Micro-X, Short Lead
.020 .51
0.02 .51
1
4
2
0.032+0.015 2.34+0.38 0.008+0.002 0.203+0.051
4 3
.020+.010 0.51+.25 0.106+0.015 2.67+0.38
1
3
2
.60+0.10 1.52+.26 .065 2.15 5 .008+.002 .20+.050
0.026+0.001 0.66+0.13 0.085+0.005 2.16+0.13 0.060+0.01 1.52+0.25
.020 .51
.215+.010 5.46+.25
85 Package:0.085" Plastic Micro-X
04 Package: 0.145" Plastic Macro-X
PAGE 7
BIPOLARICS, INC.
Part Number B15V140
MIDIUM POWER SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
08 Ceramic SO8 Package
0.086 (2.184)
Emitter Base Base Emitter
.020 (.508)
.070 (1.778) Collector
Emitter Collector
Emitter
.160 (4.064) .190 (4.826)
.050 (1.27)
NOTES: (unless otherwise specified)
in 1. Dimensions are (mm) 2. Tolerances: in .xxx = .005 mm .xx = .13 3. All dimensions nominal; subject to change without notice
BIPOLARICS, INC. 46766 Lakeview Blvd. Fremont, CA 94538 Phone: (510) 226-6565 FAX: (510) 226-6765


▲Up To Search▲   

 
Price & Availability of B15V140

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X